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2SC461

Hitachi Semiconductor

Silicon NPN Transistor

2SC460, 2SC461 Silicon NPN Epitaxial Planar Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier...


Hitachi Semiconductor

2SC461

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Description
2SC460, 2SC461 Silicon NPN Epitaxial Planar Application 2SC460 high frequency amplifier, mixer 2SC461 VHF amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC460, 2SC461 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC460 30 30 5 100 200 150 –55 to +150 2SC461 30 30 5 100 200 150 –55 to +150 Unit V V V mA mW °C °C 2 2SC460, 2SC461 Electrical Characteristics (Ta = 25°C) 2SC460 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO 1 2SC461 Max — — — 0.5 0.5 0.75 200 1.1 — 3.5 — — — Min 30 30 5 — — — 35 — — — — 13 — Typ — — — — — 0.63 — 0.6 230 1.8 — 17 — Max — — — 0.5 0.5 0.75 200 1.1 — 3.5 — — — V MHz pF dB dB dB Unit V V V µA µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IE = –1 mA f = 10.7 MHz VCE = 6 V, IE = –1 mA f = 100 MHz VCE = 6 V, IE = –1 mA f = 1MHz Rg = 500Ω Min 30 30 5 — — — 35 — — — 26 — — Typ — — — — — 0.63 — 0.6 230 1.8 29 — 2.0 Base to emitter voltage VBE DC current transfer rati...




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