2SC4626

Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 1.6±0.15 Unit: mm s Features q q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25˚C) Ratings 30 20 5 30 125 125 –55 ~ +125 Unit V V V mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS–Mini Type Package Marking symbol : V s Electrical Characteristics Parameter Collector cutoff current Forward current transfer ratio Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance (Ta=25˚C) Symbol ICBO hFE* fT NF Zrb Cre Conditions VCB = 10V, IE = 0 VCB = 10V, IE = –1mA VCB = 10V, IE = –1mA, f = 200MHz VCB = 10V, IE = –1mA, f = 5MHz VCB = 10V, IE = –1mA, f = 2MHz VCB = 10V, IE = –1mA, f = 10.7MHz 70 150 250 2.8 22 0.9 4 50 1.5 min typ max 0.1 220 MHz dB Ω pF Unit µA *h FE Rank classification Rank hFE Marking Symbol B 70 ~ 140 VB C 110 ~ 220 VC 0 to 0.1 0.2±0.1 +0.1 1 Transistor PC — Ta 150 12 Ta=25˚C 125 10 IB=100µA 12.5 2SC46...