2SC4628

2SC4628 Silicon NPN Planar Application High frequency amplifier Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4628 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 20 3 20 200 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Gain bandwidth product Reverse transfer capacitance Symbol V(BR)CBO V(BR)CEO I EBO I CBO hFE fT Cre Min 20 20 — — 60 600 — Typ — — — — — — — Max — — 10 1 320 — 0.9 MHz pF Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ VEB = 3 V, IC = 0 VCB = 15 V, IE = 0 VCE = 10 V, IC = 2 mA VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, emitter common, f = 1 MHz VCB = 10 V, IC = 2 mA, f = 800 MHz Power gain Noise figure PG NF 10 — — — — 7.0 dB dB 2 2SC4628 Maximum Collector Dissipation Curve 300 Collector Power Dissipation PC (mW) 100 DC Current Transfer Ratio hFE VCE = 10 V 80 60 40 20 0 0 50 100 Ambient Temperature Ta (°C) 150 1 2 5 10 20 Collector Current IC (mA) 50 DC Current Transfer Ratio vs. Collector Current 200 100 Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) VCE = 10 V 1600 Ceverse Transfer Capacitan...