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2SC4630 Dataheets PDF



Part Number 2SC4630
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN TRANSISTOR
Datasheet 2SC4630 Datasheet2SC4630 Datasheet (PDF)

Ordering number:EN3699A NPN Triple Diffused Planar Silicon Transistor 2SC4630 900V/100mA High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=900V). · Small Cob (typical Cob=2.8pF). · Full isolation package. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2079B [2SC4630] 10.0 4.5 2.8 3.5 3.2 7.2 16.0 16.1 0.9 1.2 3.6 0.75 1 2 3 14.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-B.

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Ordering number:EN3699A NPN Triple Diffused Planar Silicon Transistor 2SC4630 900V/100mA High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEO min=900V). · Small Cob (typical Cob=2.8pF). · Full isolation package. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2079B [2SC4630] 10.0 4.5 2.8 3.5 3.2 7.2 16.0 16.1 0.9 1.2 3.6 0.75 1 2 3 14.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI (LS) 2.4 0.6 0.7 Ratings 1500 900 5 100 300 2 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter w Symbol D a t a Conditions VChB=900V e , IE=0 e VEB=4V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA IC=20mA, IB=4mA IC=20mA, IB=4mA t 4 U . n Ratings min e typ t max 10 10 Unit µA µA MHz 5 2 V V V V V Collectw or Cutofwf Curren . t Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO S IEBO hFE fT 30 6 Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage VCE(sat) VBE(sat) V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=1mA, RBE=∞ V(BR)EBO IE=1mA, IC=0 1500 900 5 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11599HA (KT)/91296YK (KOTO) TA-0465 No.3699–1/3 2SC4630 Parameter Output Capacitance Thermal Resistance Symbol Cob Rthj-c VCB=100V, f=1MHz Junction – case Conditions Ratings min typ 2.8 12.5 max Unit pF ˚C/W www.DataSheet4U.net No.3699–2/3 2SC4630 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products .



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