Power Transistors
2SC4638
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Uni...
Power
Transistors
2SC4638
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.2±0.2
16.7±0.3 7.5±0.2 0.7±0.1
■ Features
10.0±0.2 5.5±0.2
4.2±0.2 2.7±0.2
High-speed switching
High collector-base voltage (Emitter open) VCBO
φ 3.1±0.1
Low collector-emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings TC = 25°C
1.4±0.1
1.3±0.2
/ Parameter
Symbol Rating
Unit
14.0±0.5 Solder Dip
(4.0)
0.8±0.1
0.5+–00..12
Collector-base voltage (Emitter open) VCBO
800
V
e ) Collector-emitter voltage (E-B short) VCES
800
V
c type Collector-emitter voltage (Base open) VCEO
500
V
n d tage. ued Emitter-base voltage (Collector open) VEBO
8
V
le s ntin Base current
IB
3
A
a e cyc isco Collector current
IC
5
A
n u t life ed, d Peak collector current
ICP
10
A
duc typ Collector power dissipation
PC
40
W
te tin rPro ued Ta=25°C
2.0
fou ontin Junction temperature
Tj
150
°C
wing disc Storage temperature
Tstg −55 to +150 °C
in n es folloplaned ■ Electrical Characteristics TC = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
c ed in ce ty Collector-emitter sustaining voltage * VCEO(SUS) IC = 0.2 A, L = 25 mH
tinu nan Collector-base cutoff current (Emitter open) ICBO VCB = 800 V, IE = 0
M is iscon ainte Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0
e/D e, m Forward current transfer ratio
...
