2SC4662
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maxim...
2SC4662
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage and High Speed Switchihg
Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4662 500 400 10 5(Pulse10) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching
Regulator and General Purpose External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=1.5A IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=12V, IE=–0.3A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 20typ 30typ
(Ta=25°C) 2SC4662 Unit
µA
V V V MHz pF
13.0min 16.9±0.3 8.4±0.2
µA
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL (Ω) 133 IC (A) 1.5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.15 IB2 (A) –0.3 ton (µs) 1max tstg (µs) 2.5max tf (µs) 0.5max
2.54
3.9 B C E
±0.2
0.8±0.2
a b
ø3.3±0.2
Weight : Approx 2.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) 2
I C – V BE Temperature Characteristics (Typical)
(V C E =4V) 5
–55˚C
Collector Current I C (A)
4
3
1
–55˚C (Case
V B E (sat)
Temp)
mp)
)
mp
p)
mp) e Te (Cas
eT
Te 25˚C (Case
125˚C (C
2
p) ase Tem
(C
...