2SC4669

SHINDENGEN Switching Power Transistor LSV Series 2SC4669 (TE10S4) 10A NPN OUTLINE DIMENSIONS Case : E-pack Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Symbol Tstg Tj VCBO VCEO VEBO IC ICP IB IBP PT Conditions Tc = 25℃ Ratings -55～150 150 60 40 7 10 20 1.5 2 10 Ratings Min 40 Max 0.1 Max 0.1 Max 0.1 Min 70 Max 0.3 Max 1.2 Max 12.5 TYP 50 Max 0.3 Max 1.5 Max 0.5 Unit ℃ ℃ V V V A A A A W ●Electrical Characteristics (Tc=25℃) Item Symbol Collector to Emitter Sustaining Voltage VCEO(sus) Collector Cutoff Current ICBO ICEO Emitter Cutoff Current IEBO DC Current Gain hFE Collector to Emitter Saturation Voltage VCE(sat) Base to Emitter Saturation Voltage VBE(sat) Thermal Resistance θjc Transition Frequency fT Turn on Time ton Storage Time Fall Time Conditions IC = 0.1A At rated Voltage At rated Voltage VCE = 2V, IC = 5A IC = 5A IB = 0.5A Junction to case VCE = 10V, IC = 1A IC = 5A IB1 = 0.5A, IB2 = 0.5A RL = 5Ω, VBB2 = 4V Unit V mA mA V V ℃/W MHz ts tf μs Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SC4669 hFE - I C VCE = 2V 1000 Tc = 150°C 100°C 50°C DC Current Gain hFE 100 − 55°C − 25°C 0°C 25°C 10 0.001 0.01 0.1 1 10 20 Collector Current IC [A] 2SC4669 Saturation Voltage 3 3A 5A 7A 10A 15A 2.5 3 IC = 1A 2.5 2 2 ...