2SC4681

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications 2SC4681 Unit: mm · Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A) · Low collector saturation voltage : VCE (sat) = 0.5 V (max) (IC = 3 A, IB = 60 mA) · Complementary to 2SA1802 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse (Note) Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg 30 30 10 6 3 6 0.5 1.0 10 150 −55 to 150 V V V A A W °C °C Note: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) 1 2002-07-23 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO VCEO hFE (1) hFE (2) VCE (sat) VBE fT Cob Test Condition VCB = 30 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 20 V, IC = 0.5 A VCE = 2 V, IC = 3 A IC = 3 A, IB = 60 mA VCE = 2 V, IC = 3 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Marking 2SC4681 Min Typ. Max Unit ― ― 100 nA ― ― ...