2SC4682

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4682 Strobe Flash Applications Medium Power Amplifier Applications 2SC4682 Unit: mm Excellent hFE linearity: hFE (1) = 800 to 3200 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 500 (typ.) (VCE = 1 V, IC = 3 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 3 A, IB = 30 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCES V (BR) CEO VEBO IC ICP IB PC Tj Tstg Rating 30 30 15 6 3 6 0.8 900 150 −55 to 150 Unit V V V A A mW °C °C JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob VCB = 30 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 0.5 A VCE = 1 V, IC = 3 A IC = 3 A, IB = 30 mA VCE = 1 V, IC = 3 A VCE = 1 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Min Typ. Max Unit ― ― 1 µA ― ― 10 µA 15 ― ― V 800 ― 3200 300 500 ― ― 0.25 0.5 V ― 0.85 1.2 V ― 150 ― MHz ― 30 ― pF 1 2004-07-26 Marking C4682 Part No. (or abbreviation c...