2SC4690

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4690 Power Amplifier Applications 2SC4690 Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1805 Suitable for use in 70-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V Collector current DC IC 10 A Pulse ICP 20 Base current IB 1 A Collector power dissipation (Tc = 25°C) PC 80 W JEDEC JEITA ― ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-16F1A Weight: 5.8 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Co...