2SC4727

Ordering number:EN3871 NPN Epitaxial Planar Silicon Transistor 2SC4727 20V/8A Switching Applications Features · Adoption of MBIT process. · Low saturation voltage. · Fast switching speed. · Large current capacity. · It is possible to make appliances more compact because its height on board is 9.5mm. · Effective in automatic inserting and counting stocked amount because of being provided for radial taping. Package Dimensions unit:mm 2084B [2SC4727] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C 2.5 2.5 Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 fT VCE(sat) VBE(sat) VCB=20V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=6A VCE=2V, IC=500mA IC=5A, IB=250mA IC=5A, IB=250mA * : The 2SC4727 is classified by 500mA hFE as follows : 100 R 200 140 S 280 200 T 400 7.5 0.5 1 : Emitter 2 : Collector 3 : Base SANYO : FLP Ratings 30 20 5 8 12 1.5 1.5 150 –55 to +150 Unit V V V A A A W ˚C ˚C Ratings min typ 100* 70 250 220 1 max 1 1 400* 400 1....