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2SC4737 Dataheets PDF



Part Number 2SC4737
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Epitaxial Planar Silicon Transistor
Datasheet 2SC4737 Datasheet2SC4737 Datasheet (PDF)

Ordering number:ENN3880A NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications · Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers). Features · High DC current gain. · Wide ASO. · On-chip Zener diode of 60 ±10V between collector and base. · Uniformity in collector-to-base breakdown voltage. · High inductive load handling capability. Specifications Package Dimensions unit:mm 2084B [2SC4737] 4.5 10.5 1.9 1.2 2..

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Ordering number:ENN3880A NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications · Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers). Features · High DC current gain. · Wide ASO. · On-chip Zener diode of 60 ±10V between collector and base. · Uniformity in collector-to-base breakdown voltage. · High inductive load handling capability. Specifications Package Dimensions unit:mm 2084B [2SC4737] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 2.5 2.5 7.5 0.5 1 : Emitter 2 : Collector 3 : Base SANYO : FLP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions With a low-voltage diode (60±10V) With a low-voltage diode (60±10V) Ratings 50 50 6 2 4 1.5 150 –55 to +150 Unit V V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Inductive Load Handling Capability Symbol Conditions ICBO IEBO hFE fT VCE(sat) VBE(sat) Es/b VCB=40V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=1A IC=1A, IB=4mA IC=1A, IB=4mA L=100mH, RBE=100Ω Ratings min typ 1000 4000 180 1.0 25 max 10 2 1.5 2.0 Unit µA mA MHz V V mJ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2000TS TA-2964/12099HA (KT)/D051MH, (KOTO) No.3880–1/4 Continued from preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Turn-on Time Storage Time Fall Time 2SC4737 Symbol Conditions V(BR)CBO V(BR)CEO ton tstg tf IC=100µA, IE=0 IC=1mA, RBE=∞ See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min typ 50 60 50 60 0.2 3.5 0.5 max 70 70 Unit V V µs µs µs Switching Time Test Circuit OUTPUT PW=50µs, D.C.≤1% IB1= --IB2=4mA INPUT RB 50Ω VR + 100µF VBB= --5V IC=250 IB1= --250 IB2=1A TUT RL 20Ω + 470µF VCC=20V Collector Current, IC – A 2000µA 2.0 IC -- VCE 1500µA 1000µA 1.6 350µA 450µA 400µA 1.2 500µA 320500µµAA 0.8 200µA 150µA 0.4 0 0 3 2 10000 7 5 3 2 1000 7 5 3 2 100 7 53 IB=0 1234 5 Collector-to-Emitter Voltage, VCE – V ITR07514 hFE -- IC VCE=5V Ta=120°C 25°C --40°C 5 7 0.1 23 5 7 1.0 Collector Current, IC – A 23 5 ITR07516 DC Current Gain, hFE Es/b Test Circuit VCC=20V, RBE=100Ω SW L +VCC TUT IB RBE 10kΩ 300Ω Collector Current, IC – A Ta=120°C 25°C --40°C IC -- VBE 2.4 VCE=5V 2.0 1.6 1.2 0.8 0.4 0 0 1000 7 5 3 2 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Base-to-Emitter Voltage, VBE – V ITR07515 Cob -- VCB f=1MHz 100 7 5 3 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V ITR07517 No.3880–2/4 Output Capacitance, Cob – pF Collector-to-Emitter Saturation Voltage, VCE(sat) – V Collector Current, IC – A 2SC4737 VCE(sat) -- IC 10 IC / IB=250 7 5 10 VBE(sat) -- IC IC / IB=250 7 5 Base-to-Emitter Saturation Voltage, VBE(sat) – V 3 2 1.0 Ta= --40°C 25°C 7 120°C 5 3 0.1 10 7 5 3 2 23 5 7 1.0 23 5 Collector Current, IC – A ITR07518 IC -- L RBE=100Ω Tc=25°C 25mJ 1.0 7 5 3 2 23 1.6 1.5 1.4 5 7 10 23 5 7 100 L – mH PC -- Ta 23 ITR07520 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Tc – ˚C ITR07522 Collector Current, IC – A 3 2 Ta= --40°C 25°C 1.0 120°C 7 5 3 0.1 2 10 7 5 ICP=4A 3 IC=2A 2 1.0 7 5 3 5 7 1.0 2 Collector Current, IC – A ASO 1001m01msms s 35 ITR07519 3 2 0.1 DC operation 7 5 3 2 Ta=25°C Single pulse 0.01 5 7 1.0 23 5 7 10 23 5 7 100 Collector-to-Emitter Voltage, VCE – V ITR07521 Collector Dissipation, PC – W No.3880–3/4 2SC4737 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and.


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