TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4793
Power Amplifier Applications Driver Stage Amplifier Applications
...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type
2SC4793
Power Amplifier Applications Driver Stage Amplifier Applications
2SC4793
Unit: mm
High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1837
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
VCBO VCEO VEBO
IC IB
PC
230 V 230 V
5V 1A 0.1 A 2.0
W 20
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency ...