TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4839
2SC4839
VHF~UHF Band Low Noise Amplifier Applications
Un...
TOSHIBA
Transistor Silicon
NPN Epitaxial Planar Type
2SC4839
2SC4839
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
20 12 3 80 40 100 125 -55~125
Unit
V V V mA mA mW °C °C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition
fT ïS21eï2 (1) ïS21eï2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
5 7 ¾ GHz
¾ 18 ¾
dB
7.5 12
¾
¾1¾
dB
¾ 1.1
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance
ICBO IEBO hFE Cob Cre
VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1 MHz (Note)
¾ ¾ 30 ¾ ¾
Note: Cre is measured by 3 terminal method with capacitance bridge.
Typ.
¾ ¾ ¾ 0.85 0.6
Max
1 1 250 ¾ 1.15
Unit mA mA
pF pF
1 2003-03-19
Marking
2SC4839
2 2003-03-19
...