2SC4886

LAPT 2SC4886 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 150 V VCEO 150 V VEBO 5 V IC 14 A IB 3 A PC 80(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol Conditions Ratings Unit ICBO VCB=150V 100max µA IEBO VEB=5V 100max µA V(BR)CEO IC=25mA 150min V hFE VCE=4V, IC=5A 50min∗ VCE(sat) IC=5A, IB=500mA 2.0max V fT VCE=12V, IE=–2A 60typ MHz COB VCB=10V, f=1MHz 200typ pF ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) 60 12 5 10 –5 0.5 IB2 ton tstg tf (A) (µs) (µs) (µs) –0.5 0.26typ 1.5typ 0.35typ 0.8±0.2 5.5 External Dimensions FM100(TO3PF) 15.6±0.2 5.5±0.2 3.45 ±0.2 23.0±0.3 9.5±0.2 16.2 ø3.3±0.2 a b 3.0 1.6 3.3 5.45±0.1 1.75 2.15 1.05 +-00..12 5.45±0.1 0.65 +0.2 -0.1 0.8 3.35 1.5 4.4 1.5 BC E Weight : Approx 6.5g a. Part No. b. Lot No. Collector Current IC(A) 750mA I C– V CE Characteristics (Typical) 14 6 0500m0Am A 400mA 300mA 200mA 10 150mA 100mA 5 50mA IB=20mA 0 0 1 2 3 4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) 3 I C– V BE Temperature Characteristics (Typical) (VCE=4V) 14 10 2 Collector Current IC(A)...