Power Transistors
2SC4892
Silicon NPN triple diffusion planar type
For power switching
Unit: mm
s Features
13.0±0.2 4....
Power
Transistors
2SC4892
Silicon
NPN triple diffusion planar type
For power switching
Unit: mm
s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q q q
High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C)
Ratings 900 900 800 7 2 1 0.3 15 2 150 –55 to +150 Unit V V V V A A A W ˚C ˚C
90°
2.5±0.2
1.2±0.1
C1.0 2.25±0.2
18.0±0.5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
0.35±0.1
0.65±0.1 1.05±0.1 0.55±0.1
0.55±0.1
C1.0
1 2 3
2.5±0.2
2.5±0.2
1:Base 2:Collector 3:Emitter MT4 Type Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 VCE = 5V, IC = 0.05A VCE = 5V, IC = 0.5A IC = 0.2A, IB = 0.04A IC = 0.2A, IB = 0.04A VCE = 10V, IC = 0.05A, f = 1MHz IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A, VCC = 250V 4 1 3 1 800 6 3 1.5 1 ...
