2SC4931

Ordering number:EN5295A NPN Epitaxial Planar Silicon Transistor 2SC4931 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. · Very small-sized package permitting 2SC4931- applied sets to be made small and slim. Package Dimensions unit:mm 2106A [2SC4931] 0.3 0.75 0.6 0 to 0.1 0.4 0.8 0.4 1.6 0.1max 0.5 0.5 1.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure ICBO IEBO hFE fT Cob | S21e |2 NF * : The 2SC4931 is classified by 15mA hFE as follows : VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=15mA VCE=5V, IC=15mA VCB=10V, f=1MHz VCE=5V, IC=15mA, f=1GHz VCE=5V, IC=5mA, f=1GHz Marking B1 B2 B3 hFE 60 to 120 90 to 180 135 to 270 0.2 0.1 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Ratings 16 8 1.5 50 100 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ 60* 9.0 0.55 10 13 1.2 max 1.0 10 270* 1.2 2.5 Unit µA µA GHz pF dB dB Any and all SANYO products described or contained herein do not have speci...