2SC4958

DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES Low Noise, High Gain Low Voltage Operation Low Feedback Capacitance Cre = 0.3 pF TYP. PACKAGE DIMENSIONS in millimeters 2.1 ± 0.1 1.25 ± 0.1 ORDERING INFORMATION 2.0 ± 0.2 0.3 +0.1 –0 0.65 0.65 2 0.3 +0.1 –0 0.15 +0.1 –0.05 PART NUMBER QUANTITY PACKING STYLE Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. Embossed tape 8 mm wide. Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. 1 3 2SC4958–T1 3 Kpcs/Reel. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4958) 0.9 ± 0.1 2SC4958–T2 3 Kpcs/Reel. 0.3 Marking ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 9 6 2 10 60 150 –65 to +150 V V V mA mW °C °C PIN CONNECTIONS 1. Emitter 2. Base 3. Collector Caution; Electrostatic sensitive Device. Document No. P10380EJ2V0DS00 (2nd edition) (Previous No. TD–2409) Date Published July 1995 P Printed in Japan The mark 5 shows revised points. 0 to 0.1 © 1995 1992 2SC4958 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed back Cap...