2SC5008

DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique. PACKAGE DIMENSIONS in millimeters 1.6 ± 0.1 0.8 ± 0.1 2 0.5 1.6 ± 0.1 1.0 0.2+0.1 –0 0.3 +0.1 –0 0.15 +0.1 –0.05 0.5 FEATURES Low Voltage Use. High fT: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) Low NF: 1.9 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) High |S21e|2: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) Ultra Super Mini Mold Package. Low Cre: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) 3 1 0.75 ± 0.05 0.6 ORDERING INFORMATION PART NUMBER 2SC5008 2SC5008-T1 1. Emitter 2. Base 3. Collector PACKING STYLE QUANTITY 50 pcs./Unit 3 kpcs./Reel Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT...