2SC5014

DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package High Gain Bandwidth Product (fT = 12 GHz TYP.) Low Noise, High Gain Low Voltage Operation 2.1 ± 0.2 1.25 ± 0.1 PACKAGE DIMENSIONS in millimeters ORDERING INFORMATION 2 3 2.0 ± 0.2 PART NUMBER 2SC5014-T1 0.65 0.3 +0.1 –0.05 0.15+0.1 –0.05 0.3 +0.1 –0.05 (1.3) +0.1 0.3 0.4 –0.05 (1.25) QUANTITY 3 Kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape. 0.60 0.3 +0.1 –0.05 1 2SC5014-T2 3 Kpcs/Reel. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC5014) 0 to 0.1 0.9 ± 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 9 6 2 10 60 150 –65 to +150 V V V mA mW ˚C ˚C PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter Caution; Electrostatic Sensitive Device. Document No. P10393EJ2V0DS00 (2nd edition) (Previous No. TD-2414) Date Published August 1995 P Printed in Japan © 4 1993 2SC5014 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current...