Document
Power Transistors
2SC5032
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
s Features
q q q q q
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
13.7–0.2
+0.5
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 500 500 400 7 6 3 1.2 30 2 150 –55 to +150 Unit V V V V A A A W ˚C ˚C
15.0±0.3
3.0±0.2
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
7°
1 2 3
1:Base 2:Collector 3:Emitter TO–220E Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 2V, IC = 1.2A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCE = 10V, IC = 0.2A, f = 1MHz IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A, VCC = 200V 10 1.0 3.0 0.3 400 10 8 40 1.0 1.5 V V MHz µs µs µs min typ max 100 100 Unit µA µA V
1
Power Transistors
PC — Ta
40 6 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2W)
2SC5032
IC — VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 3 1 0.3 0.1 0.03 0.01 0.1 TC=100˚C 25˚C –25˚C
VCE(sat) — IC
Collector power dissipation PC (W)
5
30
Collector current IC (A)
(1)
IB=500mA 4 400mA 300mA 3 200mA 100mA 50mA 1
20
2
10 (2)
(3) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12
0.3
1
3
10
30
100
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) — IC
100
hFE — IC
IC/IB=5 1000 VCE=5V 100
fT — IC
VCE=10V f=1MHz TC=25˚C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
30
300
Transition frequency fT (MHz)
0.3 1 3 10
30
10
100 TC=125˚C 30 25˚C 10 –25˚C
10
3 TC=–25˚C 125˚C 25˚C 0.3
3
1
1
3
0.3
0.1 0.1
0.3
1
3
10
30
100
1 0.01 0.03
0.1
0.1 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob — VCB
1000 100 IE=0 f=1MHz TC=25˚C 30
ton, tstg, tf — IC
Pulsed tw=1ms Duty cycle=1% IC/IB=10 (2IB1=–IB2) VCC=200V TC=25˚C tstg
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25˚C
Collector output capacitance Cob (pF)
Switching time ton.