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2SC5032 Dataheets PDF



Part Number 2SC5032
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5032 Datasheet2SC5032 Datasheet (PDF)

Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 s Features q q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip 13.7–0.2 +0.5 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 5.

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Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 s Features q q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip 13.7–0.2 +0.5 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 500 500 400 7 6 3 1.2 30 2 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 15.0±0.3 3.0±0.2 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 2V, IC = 1.2A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCE = 10V, IC = 0.2A, f = 1MHz IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A, VCC = 200V 10 1.0 3.0 0.3 400 10 8 40 1.0 1.5 V V MHz µs µs µs min typ max 100 100 Unit µA µA V 1 Power Transistors PC — Ta 40 6 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2W) 2SC5032 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 0.3 0.1 0.03 0.01 0.1 TC=100˚C 25˚C –25˚C VCE(sat) — IC Collector power dissipation PC (W) 5 30 Collector current IC (A) (1) IB=500mA 4 400mA 300mA 3 200mA 100mA 50mA 1 20 2 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=5 1000 VCE=5V 100 fT — IC VCE=10V f=1MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 0.3 1 3 10 30 10 100 TC=125˚C 30 25˚C 10 –25˚C 10 3 TC=–25˚C 125˚C 25˚C 0.3 3 1 1 3 0.3 0.1 0.1 0.3 1 3 10 30 100 1 0.01 0.03 0.1 0.1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 1000 100 IE=0 f=1MHz TC=25˚C 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (2IB1=–IB2) VCC=200V TC=25˚C tstg Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25˚C Collector output capacitance Cob (pF) Switching time ton.


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