2SC5041

Ordering number:EN4779 NPN Triple Diffused Planar Silicon Transistor 2SC5041 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (HVP process). · High breakdown voltage (VCBO=1600V). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5041] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) VCB=800V, IE=0 VCE=1600V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=5A, IB=1.25A IC=5A, IB=1.25A 2.8 2.0 1.0 123 5.45 5.45 3.5 20.4 2.0 0.6 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Ratings 1600 800 6 7 16 3.0 60 150 –55 to +150 Unit V V V A A W W ˚C ˚C Ratings min typ 800 40 max 10 1.0 130 5 1.5 Unit µA mA V mA V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such...