2SC5051

2SC5051 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5051 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product S21 Parameter Power gain Noise figure Note: Marking is “YZ–”. I EBO hFE Cob fT |S21| PG NF Min 15 — — — 50 — 8.0 — 11.5 — Typ — — — — 120 0.65 11.0 14.0 14.5 1.1 Max — 10 1 10 250 1.15 — — — 2.0 pF GHz dB dB dB Unit V µA mA µA Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 1000 MHz VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. See characteristic curves of 2SC4926...