2SC5075

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5075 2SC5075 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications Industrial Applications Unit: mm High-speed switching: tr = 1.0 μs (max), tf = 1.0 μs (max) High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 500 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current IC 2 A Base current IB 0.5 A Collector power dissipation Junction temperature PC 1.3 W Tj 150 °C JEDEC ― Storage temperature range Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-8M1A temperature/current/voltage and the significant change in Weight: 0.55 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Electrical Characteristics (Ta = 25°C) 2SC5075 Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-e...