2SC5079

2SC5079 Silicon NPN Epitaxial ADE-208-222 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 12 GHz Typ High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline CMPAK–4 2 3 4 1 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5079 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 20 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Symbol I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “ZC–”. I EBO hFE Cob fT PG NF Min — — — 50 — 9 14 — Typ — — — 120 0.3 12 17 1.6 Max 10 1 10 160 0.8 — 20 2.5 pF GHz dB dB Unit µA mA µA Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 10 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 10 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. See characteristic curves of 2SC5078. 2 2SC5079 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 120 100 80 60 40 20 0 50 10...