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2SC5080 Dataheets PDF



Part Number 2SC5080
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5080 Datasheet2SC5080 Datasheet (PDF)

2SC5080 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5080 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbo.

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2SC5080 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5080 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “ZD–”. I EBO hFE Cob fT PG NF Min 15 — — — 50 — 10.5 15 — Typ — — — — 90 0.4 13.5 18 1.1 Max — 1 1 10 160 0.75 — — 2.0 pF GHz dB dB Unit V µA mA µA Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. 2 2SC5080 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 200 DC Current Transfer Ratio h FE VCE = 5V DC Current Transfer Ratio vs. Collector Current 160 100 120 80 50 40 0 0.1 0 50 100 Ambient Temperature Ta (°C) 150 1 10 Collector Current I C (mA) 100 Gain Bandwidth Product vs. Collector Current 20 Gain Bandwidth Product f T (GHz) Collector Output Capacitance Cob (pF) 5 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 2 1 0.5 16 VCE = 5V 12 VCE = 1V 8 4 0 1 2 5 10 20 Collector Current I C (mA) 50 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 Collector to Base Voltage V CB (V) 3 2SC5080 Power Gain vs. Collector Current 20 VCE = 5V 16 Power Gain PG (dB) f = 2 GHz f = 900 MHz NF (dB) 5 VCE = 5V 4 Noise Figure vs. Collector Current 12 3 8 Noise Figure 2 f = 2GHz 4 0 1 2 5 10 20 Collector Current I C (mA) 50 1 0 1 f = 900MHz 5 10 20 2 Collector Current I C (mA) 50 S21 Parameter vs. Collector Current 20 |S 21 | 2 (dB) f = 1 GHz |S 21 | 2 (dB) VCE = 1V 16 20 S21 Parameter vs. Collector Current VCE = 5V 16 f = 2 GHz 12 f = 1 GHz 12 f = 2 GHz S 21 parameter S 21 parameter 8 8 4 0 1 2 5 10 20 Collector Current I C (mA) 50 4 0 1 2 5 10 20 Collector Current I C (mA) 50 4 2SC5080 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 –10 –.2 –5 –4 –3 –.4 –.6 –.8 –1.5 –2 –120° –1 –90° 180° 0° 150° 30° 1 1.5 2 S21 Parameter vs. Frequency 90° 120° Scale: 5 / div. 60° –150° –30° –60° Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) S12 Parameter vs. Frequency 90° 120° S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 30° .2 Scale: 0.04 / div. 60° 150° 4 5 10 180° 0° 0 .2 .4 .6 .8 1 1.5 2 3 45 10 –10 –.2 –150° –30° –.4 –120° –60° –90° –.6 –.8 –1.5 –2 –1 –5 –4 –3 Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) 5 2SC5080 S Parameters (VCE = 5 V, IC = 5 mA, ZO = 50 Ω) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.798 0.699 0.592 0.532 0.465 0.432 0.401 0.390 0.373 0.373 ANG. –30.8 –60.8 –83.0 –99.9 –114.5 –128.2 –139.6 –150.2 –160.5 –168.3 S21 MAG. 11.47 9.88 8.35 7.03 6.02 5.23 4.58 4.14 3.76 3.42 ANG. 157.3 139.6 126.1 115.7 107.6 101.0 95.2 90.7 86.4 82.6 S12 MAG. 0.0329 0.0570 0.0718 0.0817 0.0891 0.0939 0.0993 0.103 0.108 0.112 ANG. 73.0 60.8 53.0 48.0 45.4 44.6 44.1 44.8 45.1 46.5 S22 MAG. 0.936 0.820 0.703 0.607 0.532 0.478 0.440 0.405 0.382 0.362 ANG. –20.0 –35.1 –46.0 –54.0 –59.8 –64.3 –67.7 –71.6 –74.7 –77.9 S Parameters (VCE = 5 V, IC = 20 mA, ZO = 50 Ω) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.588 0.482 0.419 0.389 0.366 0.365 0.354 0.356 0.361 0.365 ANG. –53.1 –89.8 –115.9 –134.1 –149.7 –161.9 –171.4 –179.7 172.7 165.3 S21 MAG. 21.24 15.59 11.75 9.29 7.64 6.47 5.63 4.98 4.48 4.06 ANG. 144.3 123.6 111.0 102.4 96.5 91.4 97.1 83.5 79.9 77.0 S12 MAG. 0.0275 0.0423 0.0507 0.0581 0.0652 0.0726 0.0806 0.0877 0.0959 0.105 ANG. 66.3 56.6 53.9 54.5 55.8 57.3 58.7 60.4 61.2 62.4 S22 MAG. 0.826 0.619 0.480 0.395 0.337 0.300 0.274 0.255 0.242 0.232 ANG. –31.8 –49.8 –58.7 –63.8 –67.6 –70.1 –72.8 –74.6 –77.1 –79.9 6 Unit: mm 2.95 ± 0.2 1.9 ± 0.2 0.95 0.95 0.4 – 0.05 + 0.1 0.4 – 0.05 + 0.1 0.65 0.16 – 0.06 + 0.1 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 0.85 1.8 ± 0.2 0.3 1.1 – 0.1 + 0.2 0.65 0.


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