2SC5088

2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 20 12 3 40 80 100 125 −55~125 Unit V V V mA mA mW °C °C USQ 1.Emitter1 2.Collector 3.Emitter2 4.Base Note: Using continuously under heavy loads (e.g. the application of JEDEC ― high temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2K1A operating temperature/current/voltage, etc.) are within the Weight: 0.006 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Insertion gain Symbol fT ⎪S21e⎪ (1) ⎪S21e⎪ (2) NF (1) NF (2) 2 2 Test Condition VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5...