TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5089
2SC5089
VHF~UHF Band Low Noise Amplifier Applications
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TOSHIBA
Transistor Silicon
NPN Epitaxial Planar Type
2SC5089
2SC5089
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 20 V
Collector-emitter voltage
VCEO 10 V
Emitter-base voltage
VEBO 1.5 V
Base current
IB 20 mA
Collector current
IC 40 mA
Collector power dissipation
PC 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
S-MINI
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 12mg (typ.)
1 2010-02-17
2SC5089
Microwave Characteristics (Ta = 25°C)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition
fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2)
NF (1)
NF (2)
VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA, f = 1 GHz VCE = 8 V, IC = 20 mA, ...