Document
2SC5099
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
120
V
VCEO
80
V
VEBO
6
V
IC
6
A
IB
3
A
PC
60(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
(Ta=25°C)
Symbol ICBO IEBO
Conditions VCB=120V
VEB=6V
Ratings Unit
10max
µA
10max
µA
V(BR)CEO hFE VCE(sat) fT COB
IC=50mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
80min 50min∗ 0.5max 20typ 110typ
V
V MHz pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
30
10
3
10
–5
0.3
IB2
ton
tstg
tf
(A)
(µs)
(µs)
(µs)
–0.3 0.16typ 2.60typ 0.34typ
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2 3.45 ±0.2
0.8±0.2 5.5
23.0±0.3 9.5±0.2
16.2
ø3.3±0.2 a b
3.0
1.6 3.3
5.45±0.1
1.75
2.15
1.05
+0.2 -0.1
5.45±0.1
0.65
+0.2 -0.1
0.8 3.35
1.5 4.4 1.5
Weight : Approx 6.5g a. Part No. B C E b. Lot No.
DC Current Gain hFE
Collector Current IC(A)
I C– V CE Characteristics (Typical)
6
200mA 150mA
100mA
80mA
50mA 4
30mA
2
20mA
IB=10mA
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V) 6
Collector Current IC(A) 215˚25C˚(CC(aCsaeseTeTmepm)p) –30˚C (Case Temp)
2
4
1
2
IC=6A
4A
2A
0
0
0
0.5
1.0
1.5
0
1
2
Base Current IB(A)
Base-Emittor Voltage VBE(V)
Transient Thermal Resistance θ j-a( ˚ C / W )
h FE– I C Characteristics (Typical)
(VCE=4V) 300
h FE– I C Temperature Characteristics (Typical)
200 125˚C
(VCE=4V)
θ j-a– t Characteristics
5
DC Current Gain hFE
100
50 30
0.02
100 Typ
50
0.1
0.5 1
Collector Current IC(A)
20
56
0.02
25˚C –30˚C
0.1
0.5 1
Collector Current IC(A)
1
0.5
0.3
56
1
10
100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=12V) 40
Cut-off Frequency fT(MHZ)
30 Typ
20
10
0 –0.02
–0.1
–1
–6
Emitter Current IE(A)
126
Collector Current IC(A)
Safe Operating Area (Single Pulse)
20
10 5
10
1m
10m 0ms
s
s
DC
1
0.5 Without Heatsink Natural Cooling
0.1 5
10
50
100
Collector-Emitter Voltage VCE(V)
Maximum Power Dissipation PC(W)
Pc–Ta Derating
60
ith Infinite heatsink W
40
20
Without Heatsink 3.5
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)
.
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