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2SC5099 Dataheets PDF



Part Number 2SC5099
Manufacturers Sanken electric
Logo Sanken electric
Description NPN TRANSISTOR
Datasheet 2SC5099 Datasheet2SC5099 Datasheet (PDF)

2SC5099 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 120 V VCEO 80 V VEBO 6 V IC 6 A IB 3 A PC 60(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol ICBO IEBO Conditions VCB=120V VEB=6V Ratings Unit 10max µA 10max µA V(BR)CEO hFE VCE(sat) fT COB IC=50mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, I.

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2SC5099 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 120 V VCEO 80 V VEBO 6 V IC 6 A IB 3 A PC 60(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol ICBO IEBO Conditions VCB=120V VEB=6V Ratings Unit 10max µA 10max µA V(BR)CEO hFE VCE(sat) fT COB IC=50mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 80min 50min∗ 0.5max 20typ 110typ V V MHz pF ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) 30 10 3 10 –5 0.3 IB2 ton tstg tf (A) (µs) (µs) (µs) –0.3 0.16typ 2.60typ 0.34typ External Dimensions FM100(TO3PF) 15.6±0.2 5.5±0.2 3.45 ±0.2 0.8±0.2 5.5 23.0±0.3 9.5±0.2 16.2 ø3.3±0.2 a b 3.0 1.6 3.3 5.45±0.1 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 0.65 +0.2 -0.1 0.8 3.35 1.5 4.4 1.5 Weight : Approx 6.5g a. Part No. B C E b. Lot No. DC Current Gain hFE Collector Current IC(A) I C– V CE Characteristics (Typical) 6 200mA 150mA 100mA 80mA 50mA 4 30mA 2 20mA IB=10mA 0 0 1 2 3 4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) 3 I C– V BE Temperature Characteristics (Typical) (VCE=4V) 6 Collector Current IC(A) 215˚25C˚(CC(aCsaeseTeTmepm)p) –30˚C (Case Temp) 2 4 1 2 IC=6A 4A 2A 0 0 0 0.5 1.0 1.5 0 1 2 Base Current IB(A) Base-Emittor Voltage VBE(V) Transient Thermal Resistance θ j-a( ˚ C / W ) h FE– I C Characteristics (Typical) (VCE=4V) 300 h FE– I C Temperature Characteristics (Typical) 200 125˚C (VCE=4V) θ j-a– t Characteristics 5 DC Current Gain hFE 100 50 30 0.02 100 Typ 50 0.1 0.5 1 Collector Current IC(A) 20 56 0.02 25˚C –30˚C 0.1 0.5 1 Collector Current IC(A) 1 0.5 0.3 56 1 10 100 Time t(ms) 1000 2000 f T– I E Characteristics (Typical) (VCE=12V) 40 Cut-off Frequency fT(MHZ) 30 Typ 20 10 0 –0.02 –0.1 –1 –6 Emitter Current IE(A) 126 Collector Current IC(A) Safe Operating Area (Single Pulse) 20 10 5 10 1m 10m 0ms s s DC 1 0.5 Without Heatsink Natural Cooling 0.1 5 10 50 100 Collector-Emitter Voltage VCE(V) Maximum Power Dissipation PC(W) Pc–Ta Derating 60 ith Infinite heatsink W 40 20 Without Heatsink 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) .



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