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2SC5101 Dataheets PDF



Part Number 2SC5101
Manufacturers Sanken electric
Logo Sanken electric
Description NPN TRANSISTOR
Datasheet 2SC5101 Datasheet2SC5101 Datasheet (PDF)

2SC5101 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 200 V VCEO 140 V VEBO 6 V IC 10 A IB 4 A PC 80(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol Conditions Ratings ICBO VCB=200V 10max IEBO VEB=6V 10max V(BR)CEO IC=50mA 140min hFE VCE=4V, IC=3A 50min∗ VCE(sat) IC=5A, IB=0.5A 0.5.

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2SC5101 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 200 V VCEO 140 V VEBO 6 V IC 10 A IB 4 A PC 80(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol Conditions Ratings ICBO VCB=200V 10max IEBO VEB=6V 10max V(BR)CEO IC=50mA 140min hFE VCE=4V, IC=3A 50min∗ VCE(sat) IC=5A, IB=0.5A 0.5max fT VCE=12V, IE=–0.5A 20typ COB VCB=10V, f=1MHz 250typ ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Unit µA µA V V MHz pF sTypical Switching Characteristics (Common Emitter) VCC RL (V) (Ω) 60 12 IC VBB1 VBB2 IB1 (A) (V) (V) (A) IB2 ton tstg tf (A) (µs) (µs) (µs) 5 10 –5 0.5 –0.5 0.24typ 4.32typ 0.40typ External Dimensions FM100(TO3PF) 15.6±0.2 5.5±0.2 3.45 ±0.2 0.8±0.2 5.5 23.0±0.3 9.5±0.2 16.2 ø3.3±0.2 a b 3.0 1.6 3.3 1.75 0.8 2.15 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 0.65 +0.2 -0.1 3.35 1.5 4.4 1.5 Weight : Approx 6.5g a. Part No. B C E b. Lot No. Collector Current IC(A) IB=400mA I C– V CE Characteristics (Typical) 10 300mA 200mA 150mA 8 100mA 75mA 6 50mA 4 20mA 2 10mA 0 0 1 2 3 4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) 3 2 1 IC=10A 5A 0 0 0.5 1.0 1.5 2.0 Base Current IB(A) Collector Current IC(A) 215˚25C˚(CC(aCsaeseTeTmepm)p) –30˚C (Case Temp) I C– V BE Temperature Characteristics (Typical) (VCE=4V) 10 8 6 4 2 0 0 1 2 Base-Emitter Voltage VBE(V) DC Current Gain hFE Transient Thermal Resistance θ j-a( ˚ C / W ) DC Current Gain hFE h FE– I C Characteristics (Typical) 200 (VCE=4V) h FE– I C Temperature Characteristics (Typical) 300 (VCE=4V) Typ 125˚C 100 100 25˚C 50 –30˚C 50 θ j-a– t Characteristics 3 1 0.5 20 0.02 0.1 0.5 1 Collector Current IC(A) 5 10 20 0.02 0.1 0.5 1 Collector Current IC(A) 5 10 0.1 1 10 100 Time t(ms) 1000 2000 f T– I E Characteristics (Typical) (VCE=12V) 40 Cut-off Frequency fT(MHZ) 30 Typ 20 10 0 –0.02 –0.1 –1 –10 Emitter Current IE(A) 128 Collector Current IC(A) Safe Operating Area (Single Pulse) 30 10 5 DC 10ms 100m s 1 0.5 Without Heatsink Natural Cooling 0.1 3 5 10 50 100 200 Collector-Emitter Voltage VCE(V) Maximum Power Dissipation PC(W) Pc–Ta Derating 80 Infinite heatsink With 60 40 20 Without Heatsink 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) .


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