Document
2SC5101
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
200
V
VCEO
140
V
VEBO
6
V
IC
10
A
IB
4
A
PC
80(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
Ratings
ICBO
VCB=200V
10max
IEBO
VEB=6V
10max
V(BR)CEO
IC=50mA
140min
hFE
VCE=4V, IC=3A
50min∗
VCE(sat)
IC=5A, IB=0.5A
0.5max
fT
VCE=12V, IE=–0.5A
20typ
COB
VCB=10V, f=1MHz
250typ
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
Unit µA µA V
V MHz pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
(V)
(Ω)
60
12
IC
VBB1
VBB2
IB1
(A)
(V)
(V)
(A)
IB2
ton
tstg
tf
(A)
(µs)
(µs)
(µs)
5
10
–5
0.5
–0.5 0.24typ 4.32typ 0.40typ
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2 3.45 ±0.2
0.8±0.2 5.5
23.0±0.3 9.5±0.2
16.2
ø3.3±0.2 a b
3.0
1.6 3.3
1.75
0.8
2.15
1.05
+0.2 -0.1
5.45±0.1
5.45±0.1
0.65
+0.2 -0.1
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Part No.
B C E b. Lot No.
Collector Current IC(A) IB=400mA
I C– V CE Characteristics (Typical)
10
300mA
200mA
150mA
8
100mA
75mA 6
50mA
4 20mA
2 10mA
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
3
2
1
IC=10A 5A
0
0
0.5
1.0
1.5
2.0
Base Current IB(A)
Collector Current IC(A) 215˚25C˚(CC(aCsaeseTeTmepm)p) –30˚C (Case Temp)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V) 10
8
6
4
2
0
0
1
2
Base-Emitter Voltage VBE(V)
DC Current Gain hFE
Transient Thermal Resistance θ j-a( ˚ C / W )
DC Current Gain hFE
h FE– I C Characteristics (Typical)
200
(VCE=4V)
h FE– I C Temperature Characteristics (Typical)
300
(VCE=4V)
Typ
125˚C
100
100
25˚C
50
–30˚C 50
θ j-a– t Characteristics
3
1 0.5
20 0.02
0.1
0.5 1
Collector Current IC(A)
5 10
20 0.02
0.1
0.5
1
Collector Current IC(A)
5 10
0.1 1
10
100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=12V) 40
Cut-off Frequency fT(MHZ)
30 Typ
20
10
0
–0.02
–0.1
–1
–10
Emitter Current IE(A)
128
Collector Current IC(A)
Safe Operating Area (Single Pulse)
30
10 5 DC
10ms 100m
s
1
0.5 Without Heatsink Natural Cooling
0.1 3
5
10
50
100 200
Collector-Emitter Voltage VCE(V)
Maximum Power Dissipation PC(W)
Pc–Ta Derating
80
Infinite heatsink With
60 40
20
Without Heatsink 3.5
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)
.