2SC5137

2SC5137 Silicon NPN Epitaxial ADE-208-224 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz typ High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5137 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is “YA–”. Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 20 80 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Symbol I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure I EBO hFE Cob fT PG NF Min — — — 50 — 7 12 — Typ — — — 120 0.45 10 16.5 1.5 Max 10 1 10 250 0.8 — — 2.5 pF GHz dB dB Unit µA mA µA Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 10 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz 2 2SC5137 Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 160 DC Current Transfer Ratio h FE 200 V CE = 5 V Pulse Test DC Current Trans...