2SC5154

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5154 Power Amplifier Applications Driver Stage Amplifier Applications 2SC5154 Unit: mm High transition frequency: fT = 100 MHz (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 160 160 5 1.5 3.0 0.15 1.3 150 −50 to 150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO IEBO VCB = 160 V, IE = 0 VEB = 5 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE (Note) VCE = 5 V, IC = 100 mA VCE (sat) VBE fT Cob IC = 500 mA, IB = 50 mA VCE = 5 V, IC = 500 mA VCE = 10 V, IC = 100 mA VCB = 10 V, IC = 0, f = 1 MHz Note: hFE classification O: 70 to 140, Y: 120 to 240 Marking JEDEC ― JEITA ― TOSHIBA 2-8M1A Weight: 0.55 g (typ.) Min Typ. Max Unit ― ― 1.0 µA ― ― 1.0 µA 160 ― ― V 70 ― 240 ― ― 1.0 V ― 0.75 0.95 V ― 100 ― MHz ― 25 ― pF C5154 Characteristics indicator Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-07 Collector cur...