DATA SHEET
SILICON TRANSISTOR
2SC5179
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz Small Mini-Mold package EIAJ: SC-70
PACKAGE DIMENSIONS (Uni...
