2SC5183

DATA SHEET SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low Noise NF = 1.3 dB NF = 1.3 dB TYP. TYP. PACKAGE DIMENSIONS @ VCE = 2 V, IC = 3 mA, f = 2 GHz @ VCE = 1 V, IC = 3 mA, f = 2 GHz (Units: mm) 0.4 +0.1 –0.05 0.4 +0.1 –0.05 3 4 5˚ 5˚ +0.1 –0.06 4-pin Mini-Mold package EIAJ: SC-61 2.9 ± 0.2 (1.8) 0.85 0.95 2.8 +0.2 –0.3 1.5 +0.2 –0.1 2 T86 ORDERING INFORMATION PART NUMBER 2SC5183-T1 1 QUANTITY ARRANGEMENT Embossed tape, 8 mm wide, Pin No. 3 (base) and No. 4 (emitter) 5˚ 0~0.1 2SC5183-T2 Embossed tape, 8 mm wide, Pins No. 1 (collector) and No. 2 (emitter) facing the perforations 5˚ PIN CONNECTIONS * Contact your NEC sales representatives to order samples for evaluation (available in batches of 50). 1. 2. 3. 4. Collector Emitter Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 5 3 2 30 90 150 –65 to +150 V V V mA mW ˚ C ˚ C Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity. Document No. P12107EJ2V0DS00 (2nd edition) (Previous No. TC-2480) Date Published November 1996 N Printed in Japan © 0.16 3 000 units/reel 0.8 facing the perforations 1.1 +0.2 –0.1 0.4 ...