2SC5185

DATA SHEET SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low Noise NF = 1.3 dB NF = 1.3 dB TYP. TYP. PACKAGE DIMENSIONS @ VCE = 2 V, IC = 3 mA, f = 2 GHz @ VCE = 1 V, IC = 3 mA, f = 2 GHz 2.1± 0.2 1.25 ± 0.1 (Units: mm) Super Mini-Mold package ORDERING INFORMATION 2 0.65 0.3 +0.1 –0.05 3 2.0 ± 0.2 (1.25) 0.60 2SC5185-T1 0.4 +0.1 –0.05 (emitter) facing the perforations 3 000 units/reel 2SC5185-T2 Embossed tape, 8 mm wide, pins No. 1 (collector) and No. 2 (emitter) facing the perforations 0.9 ± 0.1 1 evaluation. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 5 3 2 30 90 150 –65 to +150 V V V mA mW °C °C PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity. Document No. P12109EJ2V0DS00 (2nd edition) (Previous No. TC-2482) Date Published November 1996 N Printed in Japan 0 to 0.1 © 0.15 +0.1 –0.05 * Contact your NEC sales representative to order samples for 0.3 4 0.3 +0.1 –0.05 Embossed tape, 8 mm wide, pins No. 3 (base), and No. 4 (1.3) PART NUMBER QUANTITY ARRANGEMENT 0.3 +0.1 –0.05 T86 1994 2SC5185 ELECTRICAL CHA...