2SC5190

Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm s Features q q q 2.1±0.1 0.425 1.25±0.1 0.425 High transition frequency fT. Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 9 6 2 30 150 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 0.7±0.1 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S–Mini Type Package Marking symbol : 3Y s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector output capacitance Transition frequency Foward transfer gain Noise figure (Ta=25˚C) Symbol ICBO IEBO hFE Cob fT | S21e |2 NF Conditions VCB = 5V, IE = 0 VEB = 1V, IC = 0 VCE = 3V, IC = 10mA VCB = 3V, IE = 0, f = 1MHz VCE = 3V, IC = 10mA, f = 1.5GHz VCE = 0.3V, IC = 1mA, f = 0.9GHz VCE = 0.3V, IC = 1mA, f = 0.9GHz 40 100 0.4 10 6.5 1.7 min typ max 1 1 160 0.7 pF GHz dB dB Unit µA µA 0.15–0.05 +0.1 s Absolute Maximum Ratings (Ta=25˚C) 0.2 0.3–0 +0.1 1 Transistor PC — Ta 240 60 Ta=25˚C 200 50 25 2SC5190 IC — VCE 30 VCE=3V IC — VBE Collector power dissipation PC...