2SC5232

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application 2SC5232 Unit: mm Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA Large collector current: IC = 500 mA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage Emitter-base voltage Collector current Base current VCEO VEBO IC IB 12 V 5V 500 mA 50 mA Collector power dissipation Junction temperature Storage temperature range PC 150 mW Tj 125 °C Tstg −55 to 125 °C JEDEC JEITA TO-236MOD SC-59 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-3F1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 12 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 1 2010-04-18 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Ba...