2SC5239

2SC5239 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5239 900 550 7 3(Pulse6) 1.5 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) 2SC5239 100max 100max 550min 10 to 30 0.5max 1.2max 6typ 35typ V MHz pF 2.5 B C E 12.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.25A VCB=10V, f=1MHz External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 Unit µA µA V 16.0±0.7 8.8±0.2 a b ø3.75±0.2 V 1.35 0.65 +0.2 -0.1 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.15 IB2 (A) –0.45 ton (µs) 0.7max tstg (µs) 4.0max tf (µs) 0.5max Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 3 40 0m A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1.5 I C /I B =5 Const. I C – V BE Temperature Characteristics (Typical) (V CE =4V) 5 300mA 200 mA 4 Collector Current I C (A) 0.5 1 5 Collector Current I C (A) 150 mA 2 100m A 1.0 V B E (sat) 3 2 1 I B =40mA 0.5 1 V C E (sat) 0 0.03 0.05 0.1 0 0 0.5 Base-Emittor Voltage V B E (V) 1....