2SC5244

Power Transistors 2SC5244, 2SC5244A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm s Features 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 3.0 2.0 4.0 10.0 6.0 q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) 1.5 26.0±0.5 / 2.0±0.3 2.0 1.5 1.5 e s Absolute Maximum Ratings (TC=25˚C) c type) Parameter Symbol Ratings Unit 20.0±0.5 2.5 Solder Dip n d ge. ed Collector to 2SC5244 1500 sta tinu VCBO V le n base voltage 2SC5244A 1600 a e cyc isco Collector to 2SC5244 1500 life d, d emitter voltage 2SC5244A VCES 1600 V n u duct type Emitter to base voltage VEBO 6 V te tin ur Pro tinued Peak collector current ICP 20 A fo on Collector current IC 30 A wing disc Collector power TC=25°C in n follo ned dissipation Ta=25°C PC 200 W 3.5 des , pla Junction temperature a o inclu type Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C M isc s iscontinuaeindtenance Electrical Characteristics (TC=25˚C) ce/D pe, m Parameter Symbol Conditions D tenan ce ty Collector cutoff 2SC5244 ain nan current 2SC5244A M ainte Emitter cutoff current d m Forward current transfer ratio (plane Collector to emitter saturation voltage ICBO IEBO hFE VCE(sat) VCB = 1500V, IE = 0 VCB = 1600V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10A IC = 10A, IB = 2.8A 3.0±0.3 1.0±0.2 5.45±0.3 10.9±0.5 2.7±0.3 0.6±0.2 123 1:Base 2:Collector ...