Power Transistors
2SC5244, 2SC5244A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
...
Power
Transistors
2SC5244, 2SC5244A
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s Features
20.0±0.5
φ 3.3±0.2 5.0±0.3
3.0
3.0
2.0 4.0
10.0 6.0
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
1.5
26.0±0.5
/ 2.0±0.3
2.0
1.5
1.5
e s Absolute Maximum Ratings (TC=25˚C)
c type) Parameter
Symbol
Ratings
Unit
20.0±0.5 2.5
Solder Dip
n d ge. ed Collector to 2SC5244
1500
sta tinu VCBO
V
le n base voltage 2SC5244A
1600
a e cyc isco Collector to 2SC5244
1500
life d, d emitter voltage 2SC5244A
VCES
1600
V
n u duct type Emitter to base voltage
VEBO
6
V
te tin ur Pro tinued Peak collector current
ICP
20
A
fo on Collector current
IC
30
A
wing disc Collector power TC=25°C
in n follo ned dissipation
Ta=25°C
PC
200 W
3.5
des , pla Junction temperature
a o inclu type Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
M isc s iscontinuaeindtenance Electrical Characteristics (TC=25˚C)
ce/D pe, m Parameter
Symbol
Conditions
D tenan ce ty Collector cutoff
2SC5244
ain nan current
2SC5244A
M ainte Emitter cutoff current
d m Forward current transfer ratio
(plane Collector to emitter saturation voltage
ICBO
IEBO hFE VCE(sat)
VCB = 1500V, IE = 0 VCB = 1600V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10A IC = 10A, IB = 2.8A
3.0±0.3 1.0±0.2
5.45±0.3 10.9±0.5
2.7±0.3 0.6±0.2
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1:Base 2:Collector ...