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2SC5249 Dataheets PDF



Part Number 2SC5249
Manufacturers Sanken electric
Logo Sanken electric
Description Silicon NPN Transistor
Datasheet 2SC5249 Datasheet2SC5249 Datasheet (PDF)

2SC5249 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5249 600 600 7 3(Pulse6) 1.5 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) 2SC5249 100max 100max 600min 20 to 40 0.5max 1.2max 6typ 50typ V V MHz pF 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V V.

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2SC5249 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5249 600 600 7 3(Pulse6) 1.5 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) 2SC5249 100max 100max 600min 20 to 40 0.5max 1.2max 6typ 50typ V V MHz pF 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.3A VCB=10V, f=1MHz External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 Unit µA V 16.9±0.3 8.4±0.2 µA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 200 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.1 IB2 (A) –0.1 ton (µs) 1.0max tstg (µs) 19max tf (µs) 1.0max 2.54 3.9 B C E I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 300mA VCE(sat)–IC Characteristics (Typical) 0.5 I C / I B =5 Const. I C – V BE Temperature Characteristics (Typical) 3 (V C E =4V) 200 mA Collector Current I C (A) Collector Current I C (A) 2 100m A 2 p) mp) e Te 25˚C (Cas se 1 I B =20mA 25˚C (Case Temp) –55˚C (Case Temp) 1 ˚C 0 0 1 2 3 4 0 0.01 0.05 0.1 0.5 1 3 0 0 0.5 Base-Emittor Voltage V B E (V) –55˚C 125 (Case (Ca Temp 50mA Tem ) 125˚C (Case Temp) ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. 1.0 Collector-Emitter Voltage V C E (V) Collector Current I C (A) h FE – I C Characteristics (Typical) (V C E =4V) 200 125˚C DC Cur rent Gain h FE 100 25˚C 50 –55˚C 30 t on •t stg • t f – I C Characteristics (Typical) θ j- a (˚ C/W) 3 θ j-a – t Characteristics t o n • t s tg • t f ( µ s) t s tg 10 V C C 200V 5 I C :I B 1 :–I B2 =10:1:1 t on 1 0.5 0.2 0.1 tf Transient Thermal Resistance Switching Ti me 1 10 5 0.01 0.5 0.05 0.1 0.5 1 3 0.5 1 3 0.3 1 10 Time t(ms) 100 1000 Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) 7 5 100 µs Reverse Bias Safe Operating Area 7 5 Ma xim um Powe r Dissipation P C ( W) 30 35 P c – T a Derating W ith Collecto r Cur ren t I C (A) Collect or Cur ren t I C (A) In fin 1 1 ite 20 he at 0.5 0.5 Without Heatsink Natural Cooling L=3mH –IB2=–1.0A Duty:less than 1% si nk Without Heatsink Natural Cooling 0.1 10 0.1 Without Heatsink 0.05 10 50 100 500 0.05 10 50 100 500 2 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 131 .


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