Document
2SC5249
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5249 600 600 7 3(Pulse6) 1.5 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
(Ta=25°C) 2SC5249 100max 100max 600min 20 to 40 0.5max 1.2max 6typ 50typ V V MHz pF
13.0min
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.3A VCB=10V, f=1MHz
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
Unit
µA
V
16.9±0.3 8.4±0.2
µA
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL (Ω) 200 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.1 IB2 (A) –0.1 ton (µs) 1.0max tstg (µs) 19max tf (µs) 1.0max
2.54
3.9 B C E
I C – V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) 3
300mA
VCE(sat)–IC Characteristics (Typical)
0.5 I C / I B =5 Const.
I C – V BE Temperature Characteristics (Typical)
3 (V C E =4V)
200 mA
Collector Current I C (A)
Collector Current I C (A)
2
100m A
2
p)
mp) e Te 25˚C (Cas
se
1
I B =20mA
25˚C (Case Temp) –55˚C (Case Temp)
1
˚C
0
0
1
2
3
4
0 0.01
0.05
0.1
0.5
1
3
0
0
0.5 Base-Emittor Voltage V B E (V)
–55˚C
125
(Case
(Ca
Temp
50mA
Tem
)
125˚C (Case Temp)
±0.2
0.8±0.2
a b
ø3.3±0.2
Weight : Approx 2.0g a. Type No. b. Lot No.
1.0
Collector-Emitter Voltage V C E (V)
Collector Current I C (A)
h FE – I C Characteristics (Typical)
(V C E =4V) 200 125˚C DC Cur rent Gain h FE 100 25˚C 50 –55˚C 30
t on •t stg • t f – I C Characteristics (Typical)
θ j- a (˚ C/W)
3
θ j-a – t Characteristics
t o n • t s tg • t f ( µ s)
t s tg 10 V C C 200V 5 I C :I B 1 :–I B2 =10:1:1 t on 1 0.5 0.2 0.1 tf
Transient Thermal Resistance
Switching Ti me
1
10 5 0.01
0.5
0.05
0.1
0.5
1
3
0.5
1
3
0.3
1
10 Time t(ms)
100
1000
Collector Current I C (A)
Collector Current I C (A)
Safe Operating Area (Single Pulse)
7 5
100 µs
Reverse Bias Safe Operating Area
7 5 Ma xim um Powe r Dissipation P C ( W) 30 35
P c – T a Derating
W ith
Collecto r Cur ren t I C (A)
Collect or Cur ren t I C (A)
In fin
1
1
ite
20
he at
0.5
0.5 Without Heatsink Natural Cooling L=3mH –IB2=–1.0A Duty:less than 1%
si nk
Without Heatsink Natural Cooling 0.1
10
0.1
Without Heatsink 0.05 10 50 100 500 0.05 10 50 100 500 2 0 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V)
Collector-Emitter Voltage V C E (V)
Ambient Temperature Ta(˚C)
131
.