2SC5251

2SC5251 Silicon NPN Triple Diffused Planar Preliminary Application Character display horizontal deflection output Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.2 µsec (typ) Isolated package TO-3PFM (N) Outline TO-3PFM (N) 1. Base 2. Collector 3. Emitter 1 2 3 2SC5251 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC* Tj Tstg 1 Ratings 1500 800 6 12 24 50 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 800 6 — 8 5 — — — Typ — — — — — — — 0.2 Max — — 500 35 9 5 1.5 0.4 V V µsec Unit V V µA Test conditions IC = 10 mA, RBE = ∞ IE = 10 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 5 A IC = 7 A, IB = 1.8 A IC = 7 A, IB = 1.8 A ICP = 6 A, IB1 = 1.5 A, fH = 31.5 kHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time V(BR)EBO ICES hFE1 hFE2 VCE(sat) VBE(sat) tf 2 2SC5251 Maximum Collector Power Dissipation Curve Pc (W) Collector Power Dissipation 80 60 40 20 0 50 100 Case Temperature 150 Tc (°C) 200 Area of Safe Operation 25 I C (...