Ordering number:ENN5287A
NPN Triple Diffused Planar Silicon Transistor
2SC5264LS
Inverter Lighting Applications
Featur...
Ordering number:ENN5287A
NPN Triple Diffused Planar Silicon
Transistor
2SC5264LS
Inverter Lighting Applications
Features
· High breakdown voltage (VCBO=1000V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.
Package Dimensions
unit:mm 2079D
[2SC5264]
10.0 3.2
3.5 7.2
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75 1 2 3
2.4
0.7
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI (LS)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
2.55
2.55
Conditions
0.6
Ratings 1000 450 9 5 10 2 30 150 –55 to +150
Unit V V V A A W W ˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCB=450V, IE=0 VCE=1000V, RBE=0 450 1.0 1.0 1.5 Conditions Ratings min typ max 10 1.0 Unit µA mA V mA V V
VCEO(sus) IC=100mA, IB=0 IEBO VEB=9V, IC=0 VCE(sat) IC=2.5A, IB=0.5A VBE(sat) IC=2.5A, IB=0.5A
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, ...
