2SC5266A

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5266A Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications 2SC5266A Unit: mm Excellent switching times: tr = 0.5 μs (max), tf = 0.3 μs (max) High breakdown voltage: VCEO = 400 V High DC current gain: hFE = 20 (min) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 600 400 7 5 7 2 1.8 150 −55 to 150 V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-10T1A Weight: 1.5 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Electrical Characteristics (Ta = 25°C) 2SC5266A Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown ...