2SC5271
Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC...
2SC5271
Silicon
NPN Triple Diffused Planar
Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5271 300 200 7 5(Pulse10) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Resonant Switching
Regulator and General Purpose
(Ta=25°C) 2SC5271 100max 100max 200min 10 to 30 15min 1.0max 1.5max 10typ 45typ V V MHz pF
13.0min
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=300V VEB=7V IC=10mA VCE=2V, IC=2.5A VCE=2V, IC=1mA IC=2.5A, IB=0.5A IC=2.5A, IB=0.5A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
Unit
µA
V
16.9±0.3 8.4±0.2
µA
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
2.54
sTypical Switching Characteristics (Common Emitter)
VCC (V) 150 RL (Ω) 60 IC (A) 2.5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –1.0 ton (µs) 0.3max tstg (µs) 1.0max tf (µs) 0.1max
3.9 B C E
±0.2
0.8±0.2
a b
ø3.3±0.2
Weight : Approx 2.0g a. Type No. b. Lot No.
132
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