2SC5275

Ordering number:EN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features · Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz). · High cutoff frequency : fT=11GHz typ. · Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=7GHz type. : S21e2=5.5dB typ (f=1.5GHz). Package Dimensions unit:mm 2018B [2SC5275] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 Specifications 1 0.95 0.95 2 1.9 2.9 0.8 1.1 1 : Base 2 : Emitter 3 : Collector SANYO : CP Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 1.5 30 200 150 –55 to +150 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE fT1 fT2 Cob Reverse Transfer Capacitance Cre * : The 2SC5275 is classified by 10mA hFE as follows : 60 3 120 90 4 180 135 5 270 Marking : MN hFE rank : 3, 4, 5 VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=10mA VCE=1V, IC=1mA VCB=10V, f=1MHz VCB=10V, f=1MHz Ratings min typ max Unit 1.0 µA 10 µA 60* 270* 8 11 GHz 7 GHz 0.45 0.7 pF 0.30 pF Continued on next page. Any and all SANYO products ...