2SC5277

Ordering number:EN5187 NPN Epitaxial Planar Silicon Transistor 2SC5277 UHF to S Band Low-Noise Amplifier, OSC Applications Features · Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz). · High cutoff frequency : fT=11GHz typ. · Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=7GHz type. : S21e2=5.5dB typ (f=1.5GHz). · Ultrasmall-sized package permitting 2SC5277- applied sets to be made small and slim. Package Dimensions unit:mm 2106A [2SC5277] 0.3 0.75 0.6 0 to 0.1 0.4 0.8 0.4 1.6 0.1max Specifications 0.5 0.5 1.6 0.2 0.1 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 1.5 30 100 150 –55 to +150 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance ICBO IEBO hFE fT1 fT2 Cob Cre * : The 2SC5277 is classified by 10mA hFE as follows : VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=10mA VCE=1V, IC=1mA VCB=10V, f=1MHz VCB=10V, f=1MHz Marking D1 D2 D3 hFE 60 to 120 90 to 180 135 to 270 Ratings min typ max Unit 1.0 µA 10 µA 60* 270* 8 11 GHz ...