Ordering number : ENN5282A
2SC5291
NPN Epitaxial Planar Silicon Transistor
2SC5291
High-Voltage Switching Applications...
Ordering number : ENN5282A
2SC5291
NPN Epitaxial Planar Silicon
Transistor
2SC5291
High-Voltage Switching Applications
Features
Package Dimensions
unit : mm 2084B
[2SC5291]
10.5 1.9 4.5
1.2
Adoption of FBET, MBIT processes. Large current capacity. Can be provided in taping. 9.5mm onboard mounting height.
2.6 1.4
7.5
1.2 1.6 0.5 1 2 3
1.0
8.5
0.5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions
1 : Emitter 2 : Collector 3 : Base
2.5 2.5
SANYO : FLP
Ratings 180 160 6 1.5 2.5 300 1.5 150 --55 to +150 Unit V V V A A mA W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO VCB=120V, IE=0 VEB=4V, IC=0 Conditions Ratings min typ max 1.0 1.0 Unit µA µA
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applica...