Ordering number : EN5292
NPN Triple Diffused Planar Silicon Transistor
2SC5298
Ultrahigh-Definition CRT Display Horizo...
Ordering number : EN5292
NPN Triple Diffused Planar Silicon
Transistor
2SC5298
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
High Speed : tf=100ns typ. High Breakdown voltage : VCBO=1500V. High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.
Package Dimensions
unit: mm 2039C-TO3PML
[2SC5298]
Specifications Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1 : Base 2 : Collector 3 : Emitter SANYO: TO3PML
Tc=25°C
Ratings 1500 800 6 10 25 3.0 70 150 –55 to +150
Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current C-E Saturation Voltage B-E Saturation Voltage DC Current Gain Storage Time Fall Time Symbol ICBO ICES VCEO(SUS) IEBO VCE(sat) VBE(sat) hFE(1) hFE(2) tstg tf Conditions VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=8A, IB=2A IC=8A, IB=2A VCE=5V, IC=1A VCE=5V, IC=8A IC=6A, IB1=1.2A, IB2=–2.4A IC=6A, IB1=1.2A, IB2=–2.4A Ratings min typ max 10 1.0 130 5 1.5 25 7 3.0 0.2 Unit µA mA V mA V V
800 40
15 4 0.1
µs µs
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