Ordering number:EN5363B
NPN Triple Diffused Planar Silicon Transistor
2SC5302
Ultrahigh-Definition CRT Display Horizon...
Ordering number:EN5363B
NPN Triple Diffused Planar Silicon
Transistor
2SC5302
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· Fast speed (t f=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC5302]
3.4 16.0
5.0 8.0
5.6 3.1
21.0
22.0
4.0
2.8 2.0
20.4
2.0
1.0
0.6
1
2
3
3.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Voltage EV mitter-to-Base Voltage CI ollector Current CI ollector Current (pulse) CP ollector Dissipation Jj unction Temperature Sg torage Temperature Ss ymbo CBO CEO EBO C CP C
Tc=25˚C
5.45
5.45
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
Cs ondition
Rt ating 1V 500 8V 00 6V 1A 5 3A 5 3W 7W 5 150 –55 to +150
2.0
Uni
T Tst
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter CI ollector Cutoff Current CV ollector Sustain Voltage EI mitter Cutoff Current CI ollector Cutoff Current DC Current Gain Symbol VCE=1500V, RBE=0 0 CES 0 CEO(sus) IC=100mA, IB=0 VEB=4V, IC=0 0 EBO CBO hFE1V hFE2V VCB=800V, IE=0 0 1.0A CE=5V, IC=0 12A CE=5V, IC=4 Conditions Ratings mp in 8V 0 1A . 1A 20 3 7 m µ tx y ma 1A . Unit m
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support syste...
