Ordering number:ENN5884A
NPN Triple Diffused Planar Silicon Transistor
2SC5305LS
Inverter Lighting Applications
Featur...
Ordering number:ENN5884A
NPN Triple Diffused Planar Silicon
Transistor
2SC5305LS
Inverter Lighting Applications
Features
· High breakdown voltage (VCBO=1200V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.
Package Dimensions
unit:mm 2079D
[2SC5305]
10.0 3.2
3.5 7.2
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75 1 2 3
0.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
1:Base 2:Collector 3:Emitter SANYO:TO-220FI (LS)
2.55
2.55
Conditions
2.4
0.6
Ratings 1200 600 9 6 12 2 35 150 –55 to +150
Unit V V V A A W W
˚C ˚C
Electrical Characteristics at Ta=25˚C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Saturation Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Storage Time Fall Time Symbol ICBO ICES VCB=600V, IE=0 VCE=1200V, RBE=0 600 1.0 1.0 1.5 30 10 2.5 0.15 µs µs 40 50 Conditons Ratings min typ max 10 1.0 Unit µA mA V mA V V
VCEO(sus) IC=100mA, IB=0 IEBO VEB=9V, IC=0 VCE(sat) IC=3.0A, IB=0.6A VBE(sat) hFE1 hFE2 tstg tf IC=3.0A, IB=0.6A VCE=5V, IC=0.3A VCE=5V, IC=2.5A IC=3.5A, IB1=0.6A, IB2=–1.2A IC=3.5A, IB1=0.6A, IB2=–1.2A
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